摘要:為消除運算放大器失調電壓對帶隙電壓精度的影響,采用NPN型三極管產生ΔVbe,并設計全新的反饋環路結構產生了低壓帶隙電壓.電路采用 SMIC 0.18 μm CMOS工藝實現,該新型低壓帶隙基準源設計輸出電壓為0.5 V,溫度系數為8 ppm/℃,電源抑制比達到-130 dB,并成功運用于16位高速ADC芯片中.
關鍵詞:帶隙基準電壓源;低壓;正溫度系數;負溫度系數;電源抑制比
中圖分類號:TN402 文獻標識碼:A
參考文獻:
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