超高頻化合物數模混合電路研究報告

郝躍　張玉明　呂紅亮　武錦　于偉華

摘 要：由于化合物半導體材料自身優良的特性，化合物半導體超高速集成電路成為引領超高頻、大功率領域的一支重要的力量。但隨著工作頻率的升高和輸出功率的不斷增大，電路和系統的電磁耦合與熱問題越來越突出。只有正確理解電、磁、熱傳輸機理和耦合機制，解決信號完整性和電磁熱兼容問題，才能突破超高頻、大功率模塊的瓶頸。該研究以超高頻數混合電路信號完整性分析以及熱效應的電磁場分析方法為研究重點，從超高頻化合物數模混合電路的分析方法、設計方法和電路驗證等方面入手，研究了化合物超高速電路信號完整性問題和系統的電磁兼容問題，提出了優化設計的理論與方法，建立了電路、電磁場、熱場一體化的設計平臺；提出了超高速數模混合電路“自頂而下”的設計流程，開發了超高速數模混合電路的體系結構，總結了時鐘分布電路等關鍵路徑及關鍵電路模塊的物理分析和實現方法，設計實現了具有國際先進水平的超高速數模混合集成電路實例；研究了化合物半導體超高速器件和電路的輻照損傷機理和抗輻照性能，建立了可用于器件和電路分析的實用化模型。這些成果標志著我國化合物超高速半導體集成電路在本研究中實現了重要的突破，同時為我國相關領域的進一步發展提供了重要的理論指導和技術支持。

關鍵詞：化合物半導體 數模混合集成電路 信號完整性

Abstract：In recent years， compound semiconductor ultra-high speed integrated circuits have emerged and been highlighted in ultra-high frequency， high-power field due to their superior material properties of high carrier mobility， high saturation drift velocity and low critical saturation electric field. But with the increase of the operating frequency and output power， circuit and system electromagnetic coupling and thermal issues become increasingly prominent. The correct understanding of heat transfer mechanism and electromagnetic coupling mechanisms are the key points to break through the bottleneck of ultra-high frequency， high-power circuits and module.In this project， particular emphasis is put on signal integrity analysis of UHF hybrid circuits and thermal effects of electromagnetic field analysis methods. The signal integrity problems and system electromagnetic compatibility problem of compound semiconductor ultra-high speed integrated circuits are investigated. An optimal design theory and methods are developed and a circuit， electromagnetic field， thermal field integrated design platform is established A "top- down" design flow for ultra- high-speed digital-analog hybrid circuit is proposed and the clock distribution circuit critical path is extracted. Based on the physical analysis and implementation methods， high level ultra-high speed integrated circuits are designed and implemented The mechanism of irradiation damage and radiation tolerance of compound semiconductor devices and circuits are studied. Novel device models are established for design and analysis of circuits which will be used in extreme environment. These results indicate the achievement of that high-speed compound semiconductor integrated in this project， which will provide an important theoretical guidance and technical support to the further development of related fields.

Key Words：Compound semiconductor；Mixed analog-digital circuit；Signal integrity analysis

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