異質兼容集成半導體光電子器件與集成基元功能微結構體系

黃曉東　李獻杰　趙建宜　齊利芳　周寧

摘 要：以納米壓印光柵制作為基礎，研究了適應納米壓印工藝的對接生長材料結構及生長工藝，生長的材料均勻性好，適合后續(xù)器件工藝制作。通過理論設計及實驗研究，優(yōu)化了淺刻蝕有源波導及深刻蝕無源波導的變換結構，降低了器件的轉換損耗及回波損耗。結合后續(xù)制作的器件，對接界面插入損耗可以小于1.5 dB。 完成了多種多波長陣列DFB激光器及高性能DFB激光器的制作，包括16通道200 GHz，300 GHz間隔1550 nm波段陣列激光器，4通道20 nm間隔1310 nm波段陣列激光器，雙八分之一相移激光器，非對稱三相移激光器，變節(jié)距啁啾調制激光器等，廣泛的驗證了壓印工藝的可靠性及適應性。研究了陣列器件的熱調諧特性及熱串擾特性，取得了器件熱特性數據。為下一步編寫陣列器件波長控制程序取得了實驗數據。依據2012年度InP基AWG測試結果，對AWG的結構設計數據進行了修正并重新設計。修正設計后制作的通道波長間隔為1.56 nm，通道中心波長1549.7 nm，串擾小于1.5dB。完成了四通道陣列激光器與多模干涉結構合波器（MMI）的單片集成芯片的設計、制作與測試， 針對集成芯片完成了器件的封裝設計。由于集成芯片管腳非常多，直流偏置，微波信號，熱調諧信號互相之間存在耦合，串擾，布線交叉等。為此采用了多層過渡板結構，有效的將各個管腳分開，降低電學串擾。搭建芯片測試平臺系統(tǒng)。完成了多波長半導體微環(huán)激光器的的制備與測試，采用InP基多量子阱激光器外延材料結構，利用感應耦合等離子體（ICP）干法刻蝕技術和SiO2鈍化工藝，研制了基于環(huán)形諧振腔的雙波長半導體激光器樣品，實現了激光光源的單片集成。改變激光器的注入電流，可調節(jié)峰值波長與波長間隔。對InP基長波長10 Gb/s 單片集成OEIC光接收機進行了電路建模、共基極和共發(fā)射極OEIC集成電路設計、制備與測試，跨組放大器達到10 Gb/s傳輸速率，PIN探測器帶寬實現7.8 GHz，OEIC器件傳輸速率達到4 Gb/s，眼圖清晰。探索了Si基準單片光發(fā)射OEIC方案的可行性。該方案是在Si片襯底上濕法腐蝕出溝槽，并在溝槽里濺射金屬層，將FP激光器芯片貼裝在溝槽里，通過金屬層將電極引出，與Si CMOS 激光驅動電路實現準單片集成。

關鍵詞：光子集成芯片 多波長微環(huán)激器 多波長陣列激光器 InP基長波長10 Gb/s單片集成OEIC光接收機 納米壓印

Abstract：The coupling efficiency and return loss between deep ridge waveguide and shallow ridge waveguide has been analyzed theoretically，an improved structure with taper has been proposed and fabricated. The result of the made-up device indicates that the insert loss on the butt-joint interface is less than 1.5 dB. Various kinds of multi-wavelength laser array and high-performance DFB lasers has been fabricated which confirmed that the nanoimprint technology is flexible enough for a range of abilities. The thermal tuning and thermal crosstalk attributes are studied which could be used to control the wavelength tuning of the laser array. Modification and redesigning on AWG is proceed based on the test result of the device fabricated in last year. The new device according to the modified design shows the result 1.56 nm wavelength interval and centre wavelength 1 549.7 nm which meet the 200 GHz c-band standard. The design， fabrication and test of the monolithic chip of four channel laser array integrated with MMI combiner are completed. The packing design of the chip is also finish. As there are too many pins of the monolithic chip of which the DC offset， the microwave signal， thermal tuning signal would bring in coupling， crosstalk wiring cross effects each other if use the single layer board， the multilayer transition board is employed to separate the pins， reduce the electrical crosstalk. The chip test platform is also established for this device. The fabrication and test of the dual wavelength semiconductor laser based on micro-ring is also accomplished， which introduce the InP MQW laser wafer， adopt ICP dry etch and SiO2 passivation technology. The sample achieved laser monolithic. The peak wavelength and wavelength interval can be tuned by turn the injection current of this laser. The circuit modeling of the 10 GB/s monolithic OEIC optical receiver based on the InP material is studied. The common base and common emitter OEIC is designed， fabricated and tested. The transmission speed of the TIA is reached 10 GB/s， the bandwidth of the PIN 7.8 G Hz， and the transmission speed of the OEIC component reached 4 GB/s. The eye pattern is clear. The practicality of the quasi monolithic OEIC transmitter based on Si is also explored. We can sputter metal on the ditch corroded by wet etch on Si，and mount the FP laser chip on it. By wiring the electrode to the Si substrate， the quasi monolithic integrated with the Si CMOS laser driver circuit could be achieved.

Key Words：Photonic integrated circuit；Multi-wavelength micro-ring laser；Multi-wavelength semiconductor laser Array 10Gb/s monolithic integrated OEIC receiver based on InP nanoimprint technology butt-joint；Array waveguide gratings

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