與硅技術(shù)融合的石墨烯類材料及其器件的研究立項報告

高鴻鈞 黃立 申承民

摘 要：石墨烯是2004年英國科學(xué)家在實驗上首次得到的一種新的碳元素結(jié)構(gòu)形態(tài)，表現(xiàn)出許多非常奇異的性質(zhì)。石墨烯的研究正在成為一個令世人密切關(guān)注的前沿課題，將對整個凝聚態(tài)物質(zhì)科學(xué)的發(fā)展和未來信息器件的研制產(chǎn)生巨大而深遠的影響。要充分發(fā)揮石墨烯的優(yōu)異性質(zhì)、實現(xiàn)工業(yè)生產(chǎn)與應(yīng)用、并與現(xiàn)有的硅基技術(shù)完美結(jié)合，必須找到合適的材料制備方法，使得到的石墨烯可以同時滿足3個必要條件：高質(zhì)量、大面積和與硅工藝兼容。目前常用的方法都無法制備出同時滿足這3個條件的石墨烯樣品。該研究為解決這一問題，提出了利用無損硅插層的方法制備高質(zhì)量、大面積、與硅技術(shù)兼容的石墨烯。主要研究內(nèi)容包括4個方面：（1）高質(zhì)量硅插層石墨烯及新型石墨烯類材料的可控制備；（2）硅插層石墨烯的摻雜、修飾與物性調(diào)控；（3）硅插層石墨烯及新型石墨烯類材料的基本物性；（4）研發(fā)基于硅插層石墨烯電子與光電子器件，包括基于該材料的新的器件結(jié)構(gòu)和與硅集成相兼容的技術(shù)。該研究的核心目標(biāo)是：（1）掌握石墨烯材料在金屬單晶表面上的生長機制，發(fā)展出高質(zhì)量、大面積石墨烯的可控制備方法，掌握硅插層的生長與控制技術(shù)，實現(xiàn)厚硅可控插層與插層的絕緣化，掌握其他新型石墨烯類材料在金屬表面的生長機制；（2）掌握硅插層石墨烯的基本物性和調(diào)控方法，理解新型石墨烯類材料的結(jié)構(gòu)對物性的影響；（3）構(gòu)建基于硅插層石墨烯的特殊功能的新型器件。該研究的實施有望在與硅技術(shù)兼容的硅插層石墨烯材料及新型石墨烯類材料的制備、物性調(diào)控和新型器件探索上取得若干原創(chuàng)性成果，這必將使我國擺脫在石墨烯這一前沿研究領(lǐng)域的落后局面，進一步增強我國在納米碳材料研究方面的國際影響力，為我國石墨烯材料和相關(guān)器件的應(yīng)用研究奠定堅實的基礎(chǔ)。

關(guān)鍵詞：與硅技術(shù)融合的石墨烯 硅插層石墨烯 石墨烯類材料 器件

Abstract：Graphene possess many unique physical and chemical properties， which has a wide range of potential applications as devices and circuits. Now graphene is becoming a very active research frontier in information science. In this project， based on the requirements of application using silicon layers intercalation of graphene to fabricate devices and circuits， we will explore the growths and device's architectures based on silicon layers intercalation of graphenedevelop new methods to realize the controllable synthesis of high-quality silicon layers intercalation of graphene with large area， and elucidate their growth mechanism based on in situ experimental observations and theoretical calculationstry to tune their properties by doping and modificationstudy the controllable nanofabrication methods of silicon layers intercalation of graphene's devices to tune their functionsinvestigate their transport， surface and interface， and device characteristics， and clarify the underlying physical mechanism of materials and devices. Through the above investigations， we hope to reach achievements on the development of silicon layers intercalation of graphene， controllable synthesis， and the exploration of new properties， new effects and new devices， enhance the research and development capabilities as well as the academic level in graphene. This research will be combination of the modern Si electronics technology and new carbon-based graphene materials， which will provide valuable research results for finding material as the next generation of nanoelectronics devices.

Key Words：Silicon integrated graphene； Silicon layers intercalation of graphene； Graphene-like materials； Devices

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