可集成的硅基光互連技術研究

宋國峰　馮雪　黃北舉　薛春來　韋欣

摘 要：2013年，該研究針對光互連回路中的關鍵器件進行了深入的研究，并對新型互連器件和互連方式進行了探索性的研究，取得的主要工作進展包括：硅基片上集成光源方面，探索了有效提高硅基發光材料光輻射效率的技術途徑：提出了基于CMOS工藝的硅光發射二極管（LED）等效電路模型，實現了在統一的集成電路環境中發光二極管和專用驅動電路的協同設計；研制了靜態和動態集成光發射陣列芯片。進一步研究了金屬微納結構中Purcell效應與發光材料線寬的相互影響關系，表明表面等離子激元（SPP）模式的傳播損耗和有源材料發光譜的展寬是獲得極高Purcell系數的制約因素；進一步驗證了金屬納米條波導（Nanostrip Metallic Waveguide）有助于降低模式體積，是非常適合用于增強硅材料這類寬線寬發光材料發光效率的波導結構。針對基于光子晶體微腔的高速直調光源，提出具有交錯空氣孔和slot結構的Nanobeam cavity，使微腔Q值的優化過程與模式體積解耦，大大的改善了微腔的調制帶寬。在硅基集成調制器方面，對集成芯片中光波模式的調控機制和器件結構進行了研究：提出了新型垂直光接口電光調制器，節省了額外的光分束器插入損耗，并具有大的耦合對準容差。實現了一種微環陣列輔助的馬赫-曾德爾干涉儀（MZI）結構的熱穩定電光調制器，既保留了MZI調制器溫度穩定性高的特點，同時又可大幅減小器件尺寸。為實現硅基集成芯片上對多波長光波信號的傳輸調控，對多路硅基集成波分復用器、光開關和光衰減器等多種功能器件開展了研究。提出了一種基于Parent-Sub Ring 結構的光分插復用器，利用熱光效應制備出4路分插復用器。成功制備出高深寬比的光子晶體和多種調控單元，在此基礎上制備出低功耗、高集成度的光開關和光衰減器。研制出SOI襯底上的高速Ge光探測器、波導型探測器和可集成的波導型鍺光電探測器，實現了硅基鍺光電探測器和硅基電光調制器單片集成的片上光互連。將新型垂直耦合光柵、電光調制器與鍺探測器單片集成，從而構成硅基單片光電子集成回路，具有光耦合、光調制以及光探測功能，能夠實現4Gb/s速率片上點到點的單通路光互連。對新型光互連方式進行了探索型的研究，提出了利用硅基光學微環構成高速軌道角動量（OAM）動態編碼/解碼器，在集成芯片上通過OAM編碼實現高速無線光通信的解決方案。對全硅集成回路進行了初步的探索，提出了利用硅基Slot型波導在硅材料強吸收波長（800～1 100 nm）獲得低傳輸損耗的方案，為利用硅基光源和硅基探測器構成全硅集成回路提供了可能。

關鍵詞：光互連 硅基光子學 納米結構 光集成

Abstract：In 2013， the investigation has been focused on the key devices， novel interconnection devices and the interconnecting method. Major progresses have been made as follow. In the investigation of integrated on-chip optical sources based on silicon， the collaborative design of LED and driver circuit in one CMOS environment has been realized， static and dynamic integrating light emission array chips have been developed. Investigation shows the propagation loss of surface plasmon （SPP） mode and the broadening of material emitting line are major limitations for Purcell coefficient. Nanostrip metallic waveguides （NMWs） that can lower the mode volume have been proved to be suitable for improve the light emission efficiency of broad line width material like silicon. A nanobeam cavity with slots and cross air holes has been brought up to the high speed direct modulate optical sources based on photonic crystal cavity， which decoupled the optimization of Q factor and the mode volume， largely improved the modulation width of the cavity. In the investigation of Si-based integrated modulators， a novel vertical light interface device has been brought up to negate the insertion loss and improve the tolerance of alignment. A micro-ring assisted MZI structure thermostabilized modulator has been carried out， cutting down the size of the device. To modulate multi-wavelength light signal in the Si based integrated chip， an 4-route optical add-drop multiplexer （ADM） based on Parent-Sub Ring （PSR） structure has been brought up by utilizing thermo-optic effect. Highly compacted OSWs and attenuators with low power consumption have been realized based on high aspect ratio photonic crystals and multiple modulation units. Based on the SOI substrate， high speed Ge-based PDs， waveguide PDs and integratable waveguide Ge-based PDs are developed. The on-chip optical interconnect between the Si-based Ge PDs and modulators are proposed. The ICs integrated by novel vertical coupling gratings， the modulator and the Ge PDs with the functions such as optical coupling， optical modulating and photodetecting are developed. The research of the novel optical interconnects suggested to utilize the Si-based micro ring high speed orbital angular momentum （OAM） dynamic encoder/decoder to realize the high speed optical communication. A Si-based slot waveguide is suggested to reduce the transmission loss at strong silicon absorbing wavelength.

Key Words：Optical Interconnect；Si-based photonics；Nano-structure；Optical Integrated

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