Improved interfacial properties of HfGdON gate dielectric Ge MOS capacitor by optimizing Gd content
2020-01-19 05:28:38LinZhou,LuLiu,Yu-HengDeng等
Chinese Physics B 2019年12期
- Chinese Physics B的其它文章
- Dynamics and control strategies of infectious disease under different scenarios on hierarchical geographical networks
- Analysis of highly efficient perovskite solar cells with inorganic hole transport material
- High efficiency hydrogen purification through P2C3 membrane：A theoretical study
- Non-thermal effects of 0.1 THz radiation on intestinal alkaline phosphatase activity and conformation
- Effects of refractory period on dynamical range in excitable networks
- Near-infrared lead chalcogenide quantum dots：Synthesis and applications in light emitting diodes