原子能科學技術
器件輻射效應研究及加固技術新進展
- 一種新型高抗輻照可配置SOI器件技術
- 重離子引起SiC MOSFET柵氧化物潛在損傷研究
- 重離子輻照引發的25 nm NAND Flash存儲器數據位翻轉
- 位移損傷效應對AlGaN/GaN HEMT器件的影響
- 用于單粒子效應輻照實驗的CYCIAE-100白光中子源研究
- Effects of Strain Channel on Electron Irradiation Tolerance of InP-based HEMT Structures
- JFET區寬度對SiC MOSFET單粒子效應的影響
- 基于實驗與仿真的SiC JFET單粒子效應研究
- Laser-assisted Simulation of Dose Rate Effects of Wide Band Gap Semiconductor Devices
- Design of Novel and Low Cost Triple-node Upset Self-recoverable Latch
- Study on Color Information Degradation Induced by γ-ray Radiation in CMOS Cameras
- GaInP/GaAs/Ge三結太陽電池100 MeV質子位移輻照損傷效應實驗研究
- PE/CNT復合材料對空間質子的屏蔽效能仿真分析

